GigaDevice Semicon Beijing · Memory ICs · MPN GD25WD10CTIGR
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| Voltage - Supply | 1.65V~3.6V |
|---|---|
| Memory Size | 1Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | 100MHz |
| Features | Write enable latch;Hardware write protection;Software write protection |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | 500ms@(32KB) |
| Page Programming Time (Tpp) | 1.6ms |
| Standby Supply Current | 0.1uA |
| Interface | SPI |
FLASH - NOR Memory IC 1Mbit SPI 100MHz SOP-8-150mil