GigaDevice Semicon Beijing · Memory ICs · MPN GD25S512MDYIGR
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 512Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | 104MHz |
| Features | Write enable latch;Software write protection;Power-on reset;Absolute write protection |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | 160ms@(64KB) |
| Page Programming Time (Tpp) | 400us |
| Standby Supply Current | 24uA |
| Interface | SPI |
2.7V~3.6V 512Mbit 104MHz SPI WSON-8-EP(6x8) Memory (ICs) RoHS