GigaDevice Semicon Beijing · Memory ICs · MPN GD25Q16EEIGR
No reviews yet — be the first to review GigaDevice Semicon Beijing GD25Q16EEIGR.
| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 16Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | 133MHz |
| Features | Write enable latch;Hardware write protection;Software write protection;Absolute write protection |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | 150ms@(32KB) |
| Page Programming Time (Tpp) | 400us |
| Standby Supply Current | 11uA |
| Interface | SPI |
2.7V~3.6V 16Mbit 133MHz SPI USON-8(2x3) Memory (ICs) RoHS