GigaDevice Semicon Beijing GD25D10CEIGR

GigaDevice Semicon Beijing · Memory ICs · MPN GD25D10CEIGR

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Specifications

Voltage - Supply2.7V~3.6V
Memory Size1Mbit
Operating temperature-
Program / Erase Cycles100,000 cycles
Clock Frequency100MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)300ms@(32KB)
Page Programming Time (Tpp)700us
Standby Supply Current0.1uA
InterfaceSPI

Technical details

2.7V~3.6V 1Mbit 100MHz SPI USON-8-EP(2x3) Memory (ICs) RoHS

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