GigaDevice Semicon Beijing · Memory ICs · MPN GD25B512MEYIGR
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 512Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | 133MHz |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | - |
| Page Programming Time (Tpp) | 150us |
| Standby Supply Current | 16uA |
| Interface | SPI |
2.7V~3.6V 512Mbit 133MHz SPI WSON-8-EP(6x8) Memory (ICs) RoHS