GeneSiC Semiconductor DB106G

GeneSiC Semiconductor · Diodes & Rectifiers · MPN DB106G

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Specifications

Non-Repetitive Peak Forward Surge Current30A
Operating Junction Temperature Range-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If)1.1V@1A
Reverse Leakage Current (Ir)5uA@800V
Current - Rectified1A
Voltage - DC Reverse(Vr)800V

Technical details

30A 1.1V@1A 1A 800V EDIP-4 Bridge Rectifiers RoHS

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