FUXINSEMI S9012-TA

FUXINSEMI · Transistors (BJTs) · MPN S9012-TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))600mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 25V 0.5A 150MHz 0.625W Through Hole TO-92-2.54mm

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