FUXINSEMI MMBTA13

FUXINSEMI · Transistors (BJTs) · MPN MMBTA13

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Specifications

Current - Collector Cutoff100nA
Vbe Saturation(VBE(sat))2V
Vbe On(VBE(on))-
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain5000;10000
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation300mW
type-
Current - Collector(Ic)300mA
Vce Saturation(VCE(sat))1.5V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 30V 0.3A 125MHz 300mW Surface Mount SOT-23

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