FUXINSEMI MMBT2907A

FUXINSEMI · Transistors (BJTs) · MPN MMBT2907A

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))1.6V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300mW Surface Mount SOT-23

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