FUXINSEMI FD965S

FUXINSEMI · Transistors (BJTs) · MPN FD965S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain1000
Pd - Power Dissipation750mW
typeNPN
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

20V 1000 NPN 5A SOT-23 Single Bipolar Transistors RoHS

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