FUXINSEMI BCV47

FUXINSEMI · Transistors (BJTs) · MPN BCV47

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO10V
DC Current Gain10000
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor 60V 500mA 170MHz 300mW Surface Mount SOT-23

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