FUXINSEMI BCM857BS

FUXINSEMI · Transistors (BJTs) · MPN BCM857BS

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain420
Pd - Power Dissipation300mW
typePNP
Number2 PNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor 45V 0.2A 200MHz 0.3W Surface Mount SOT-363

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