FUXINSEMI BC856BS

FUXINSEMI · Transistors (BJTs) · MPN BC856BS

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation200mW
Number2 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 65V 0.1A 100MHz 0.2W Surface Mount SOT-363

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