FUXINSEMI BC846BDW1T1G-FS

FUXINSEMI · Transistors (BJTs) · MPN BC846BDW1T1G-FS

No reviews yet — be the first to review FUXINSEMI BC846BDW1T1G-FS.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation200mW
Number2 NPN
type-
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor 65V 0.1A 100MHz 200mW Surface Mount SOT-363

Related Transistors (BJTs)