FOSAN SS8050S

FOSAN · Transistors (BJTs) · MPN SS8050S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))1.2V

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 300mW Surface Mount SOT-23

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