FOSAN SS8050

FOSAN · Transistors (BJTs) · MPN SS8050

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor 20V 1500mA 120MHz 300mW Surface Mount SOT-23

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