FOSAN MMBTA94-6AF

FOSAN · Transistors (BJTs) · MPN MMBTA94-6AF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 400V 200mA 50MHz 350mW Surface Mount SOT-23

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