FOSAN BC848B

FOSAN · Transistors (BJTs) · MPN BC848B

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain450
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor 30V 100mA 100MHz 300mW Surface Mount SOT-23

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