EIC MMBT6517BEC

EIC · Transistors (BJTs) · MPN MMBT6517BEC

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain200
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 200mW Surface Mount TO-236

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