EG Micro EG2103

EG Micro · Power Management ICs · MPN EG2103

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Specifications

Rise Time70ns
Low Level Delay Time780ns
High Level Delay Time220ns
Fall Time35ns
Current - Output High(IOH)300mA
FeaturesUnder Voltage Protection;Dead-time control;Interleaved conduction protection
Load TypeMOSFET
Quiescent Current200uA
Operating Temperature-45℃~+125℃
Voltage - Supply10V~20V
Current - Output Low(IOL)600mA

Technical details

Gate Driver IC MOSFET SOIC-8

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