DOWO SS8050 200-350

DOWO · Transistors (BJTs) · MPN SS8050 200-350

No reviews yet — be the first to review DOWO SS8050 200-350.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)