DOWO SS8050 160-400

DOWO · Transistors (BJTs) · MPN SS8050 160-400

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 120MHz 350mW Surface Mount SOT-23

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