DOWO MJD45H11T4G-DW

DOWO · Transistors (BJTs) · MPN MJD45H11T4G-DW

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain60
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation20W
Number1 PNP
typePNP
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 80V 8A 50MHz 20W Surface Mount TO-252

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