DOWO MJD31C

DOWO · Transistors (BJTs) · MPN MJD31C

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Specifications

Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain25
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation40W
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 40W Surface Mount TO-252

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