DOWO BC856 3B

DOWO · Transistors (BJTs) · MPN BC856 3B

No reviews yet — be the first to review DOWO BC856 3B.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 200mW Surface Mount SOT-23

Related Transistors (BJTs)