DIODES ZXTP5401GTA

DIODES · Transistors (BJTs) · MPN ZXTP5401GTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 2W Surface Mount SOT-223

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