DIODES ZXTP4003GTA

DIODES · Transistors (BJTs) · MPN ZXTP4003GTA

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain60
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 100V 1A 2W Surface Mount SOT-223

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