DIODES ZXTP25100BFHTA

DIODES · Transistors (BJTs) · MPN ZXTP25100BFHTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO8.2V
DC Current Gain55
Pd - Power Dissipation1.25W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))130mV

Technical details

Bipolar (BJT) Transistor PNP 100V 2A 200MHz 1.25W Surface Mount SOT-23

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