DIODES ZXTP25012EFHTA

DIODES · Transistors (BJTs) · MPN ZXTP25012EFHTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)310MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain500
Pd - Power Dissipation1.25W
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

12V 500 PNP 4A SOT-23-3 Single Bipolar Transistors RoHS

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