DIODES ZXTP2014ZQTA

DIODES · Transistors (BJTs) · MPN ZXTP2014ZQTA

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain225
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))37mV;50mV;80mV;255mV

Technical details

160V 225 1 PNP PNP 3A SOT-89 Single Bipolar Transistors RoHS

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