DIODES ZXTP2013ZTA

DIODES · Transistors (BJTs) · MPN ZXTP2013ZTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain100
Pd - Power Dissipation2.1W
typePNP
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

100V 100 PNP 3.5A SOT-89-3 Single Bipolar Transistors RoHS

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