DIODES ZXTP2013GTA

DIODES · Transistors (BJTs) · MPN ZXTP2013GTA

No reviews yet — be the first to review DIODES ZXTP2013GTA.

Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain25
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))340mV

Technical details

Bipolar (BJT) Transistor PNP 100V 5A 125MHz 3W Surface Mount SOT-223

Related Transistors (BJTs)