DIODES ZXTP2012ZQTA

DIODES · Transistors (BJTs) · MPN ZXTP2012ZQTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO8.1V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)4.3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))215mV

Technical details

60V 100 1 PNP PNP 4.3A SOT-89 Single Bipolar Transistors RoHS

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