DIODES ZXTP2009ZQTA

DIODES · Transistors (BJTs) · MPN ZXTP2009ZQTA

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)152MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO7V
DC Current Gain170
Pd - Power Dissipation3W
typePNP
Current - Collector(Ic)5.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))60mV

Technical details

Bipolar (BJT) Transistor PNP 40V 5.5A 152MHz Surface Mount SOT-89

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