DIODES ZXTP2006E6TA

DIODES · Transistors (BJTs) · MPN ZXTP2006E6TA

No reviews yet — be the first to review DIODES ZXTP2006E6TA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain300
Pd - Power Dissipation1.1W
typePNP
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))130mV

Technical details

20V 300 PNP 3.5A SOT-23-6 Single Bipolar Transistors RoHS

Related Transistors (BJTs)