DIODES ZXTP03200BGTA

DIODES · Transistors (BJTs) · MPN ZXTP03200BGTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)105MHz
Collector - Emitter Voltage VCEO200V
Emitter-Base Voltage VEBO7V
DC Current Gain20
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))160mV

Technical details

200V 20 1 PNP PNP 2A SOT-223-4 Single Bipolar Transistors RoHS

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