DIODES ZXTNS618MCTA

DIODES · Transistors (BJTs) · MPN ZXTNS618MCTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7V
DC Current Gain450
Pd - Power Dissipation19.6W
Number1 NPN
typeNPN
Current - Collector(Ic)4.5A
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 20V 4.5A 140MHz 19.6W Surface Mount DFN-8-EP(2x3)

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