DIODES ZXTN649FTA

DIODES · Transistors (BJTs) · MPN ZXTN649FTA

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO25V
DC Current Gain200
Pd - Power Dissipation725mW
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

25V 200 NPN 3A SOT-23-3 Single Bipolar Transistors RoHS

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