DIODES ZXTN620MATA

DIODES · Transistors (BJTs) · MPN ZXTN620MATA

No reviews yet — be the first to review DIODES ZXTN620MATA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO7V
DC Current Gain110
Pd - Power Dissipation12W
Number1 NPN
typeNPN
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))185mV

Technical details

Bipolar (BJT) Transistor NPN 80V 3.5A 160MHz 12W Surface Mount W-DFN-3(2x2)

Related Transistors (BJTs)