DIODES ZXTN619MATA

DIODES · Transistors (BJTs) · MPN ZXTN619MATA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)165MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain200
Pd - Power Dissipation19.6W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))145mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 4A 165MHz 19.6W Surface Mount DFN-3(2x2)

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