DIODES ZXTN5551ZTA

DIODES · Transistors (BJTs) · MPN ZXTN5551ZTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain80
Pd - Power Dissipation1.2W
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

160V 80 NPN 600mA SOT-89-3 Single Bipolar Transistors RoHS

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