DIODES ZXTN25100DZTA

DIODES · Transistors (BJTs) · MPN ZXTN25100DZTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain40
Pd - Power Dissipation1.1W
Number1 NPN
typeNPN
Current - Collector(Ic)2.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor NPN 100V 2.5A 175MHz 1.1W Surface Mount SOT-89

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