DIODES ZXTN25100BFHTA

DIODES · Transistors (BJTs) · MPN ZXTN25100BFHTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain50
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))80mV

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 160MHz 1.25W Surface Mount SOT-23

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