DIODES ZXTN25050DFHTA

DIODES · Transistors (BJTs) · MPN ZXTN25050DFHTA

No reviews yet — be the first to review DIODES ZXTN25050DFHTA.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain300
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))60mV

Technical details

Bipolar (BJT) Transistor NPN 50V 4A 200MHz 1.25W Surface Mount SOT-23

Related Transistors (BJTs)