DIODES ZXTN25012EZTA

DIODES · Transistors (BJTs) · MPN ZXTN25012EZTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain185
Pd - Power Dissipation2.4W
Number1 NPN
typeNPN
Current - Collector(Ic)6.5A
Vce Saturation(VCE(sat))270mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 12V 6.5A 260MHz 2.4W Surface Mount SOT-89

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