DIODES ZXTN25012EFLTA

DIODES · Transistors (BJTs) · MPN ZXTN25012EFLTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain500
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))65mV

Technical details

Bipolar (BJT) Transistor NPN 12V 2A 350mW Surface Mount SOT-23

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