DIODES ZXTN25012EFHTA

DIODES · Transistors (BJTs) · MPN ZXTN25012EFHTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain500
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))32mV

Technical details

Bipolar (BJT) Transistor NPN 12V 6A 260MHz 1.25W Surface Mount SOT-23

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