DIODES ZXTN2020FTA

DIODES · Transistors (BJTs) · MPN ZXTN2020FTA

No reviews yet — be the first to review DIODES ZXTN2020FTA.

Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation1.2W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))50mV

Technical details

Bipolar (BJT) Transistor NPN 100V 4A 130MHz 1.2W Surface Mount SOT-23

Related Transistors (BJTs)