DIODES ZXTN2011ZTA

DIODES · Transistors (BJTs) · MPN ZXTN2011ZTA

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation2.1W
Number1 NPN
typeNPN
Current - Collector(Ic)4.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))115mV

Technical details

Bipolar (BJT) Transistor NPN 100V 4.5A 130MHz 2.1W Surface Mount SOT-89

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