DIODES ZXTN2010GTA

DIODES · Transistors (BJTs) · MPN ZXTN2010GTA

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))60mV

Technical details

Bipolar (BJT) Transistor NPN 60V 6A 130MHz 3W Surface Mount SOT-223

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